Title :
Dose rate and annealing effects on total dose response of MOS and bipolar circuits
Author :
Carrière, T. ; Beaucour, J. ; Gach, A. ; Johlander, B. ; Adams, L.
Author_Institution :
Matra Marconi Space, France
fDate :
12/1/1995 12:00:00 AM
Abstract :
Different part types of major technology families were irradiated in order to study dose rate and post irradiation annealing effects. Results confirm that degradation of MOS technologies at low dose rates can be predicted from high dose rate and annealing measurements, while this is not possible for bipolar linear ICs. The ESA/SCC22900 test method is discussed
Keywords :
MOS integrated circuits; annealing; bipolar integrated circuits; integrated circuit testing; radiation effects; ESA/SCC22900 test method; MOS ICs; MOS technologies degradation; annealing effects; bipolar linear ICs; dose rate; post irradiation annealing effects; total dose response; Annealing; Automatic testing; BiCMOS integrated circuits; Bipolar integrated circuits; Circuit testing; Degradation; Interface states; Performance evaluation; Random access memory; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
