DocumentCode
777715
Title
A study of MIMIM on-chip capacitor using Cu/SiO2 interconnect technology
Author
Chen Zhen ; Guo Lihui ; Yu Mingbin ; Zhang Yi
Author_Institution
Dept. of Deep Sub-micron Integrated Circuit-Process Integration, Inst. of Microelectron., Singapore, Singapore
Volume
12
Issue
7
fYear
2002
fDate
7/1/2002 12:00:00 AM
Firstpage
246
Lastpage
248
Abstract
A new metal-insulator-metal-insulator-metal (MIMIM) on-chip capacitor is fabricated using Cu/SiO2 backend technology. A capacitance density of 1.7 fF/μm2 has been achieved with satisfactory dc and RF characteristics. Compared with conventional metal-insulator-metal (MIM) capacitors, the MIMIM doubles the capacitance density without weakening quality in either dc or RF characteristics. Also, its yield is predictable. Therefore, it has been shown to be a convenient and reliable method to improve capacitance density for on-chip standard Cu/SiO2 backend technology.
Keywords
CMOS integrated circuits; MIM devices; capacitors; copper; field effect MMIC; integrated circuit interconnections; integrated circuit yield; silicon compounds; CMOS integrated circuits; Cu-SiO/sub 2/; Cu/SiO/sub 2/ backend technology; Cu/SiO/sub 2/ interconnect technology; MIMIM on-chip capacitor; RF characteristics; capacitance density; dc characteristics; metal-insulator-metal-insulator-metal on-chip capacitor; microwave integrated circuit; yield estimation; Dielectrics; Inductors; Integrated circuit interconnections; Integrated circuit reliability; Integrated circuit technology; Integrated circuit yield; MIM capacitors; Parasitic capacitance; Radio frequency; Spirals;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2002.801132
Filename
1016812
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