Title :
Characterization method for ionizing radiation degradation in power MOSFETs
Author :
de la Bardonnie, M. ; Maouad, A. ; Mialhe, P. ; Elmazria, O. ; Hoffmann, A. ; Lepley, B. ; Charles, J.-P.
Author_Institution :
Centre d´´Etudes Fondamentales, Perpignan Univ., France
fDate :
12/1/1995 12:00:00 AM
Abstract :
An innovative method for power MOSFET´s characterization is presented. The radiation-induced degradation of structural parameters in the body-drain junction is shown to be related to the total dose. These results provide a new way, through these new parameters, to qualify the radiation response of power MOSFETs
Keywords :
power MOSFET; semiconductor device testing; body-drain junction; characterization method; ionizing radiation degradation; power MOSFETs; radiation response; structural parameters; total dose; Circuits; Degradation; Diodes; Electron traps; Energy consumption; Ionizing radiation; MOSFETs; Photonic band gap; Structural engineering; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
