Enhanced damage in linear bipolar integrated circuits at low dose rate

Author

Johnston, A.H. ; Rax, B.G. ; Lee, C.I.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1650

Lastpage

1659

Abstract

Enhanced damage at low dose rates was investigated for several different types of linear integrated circuits that were fabricated with conventional junction isolation. Although both npn and pnp transistors exhibit increased damage at low dose rate, the effect is far greater for substrate and lateral pnp transistors from these technologies. The saturation level of damage at high doses was also found to be far greater under low dose rate conditions than at high dose rates. A model for this behavior was developed that is consistent with earlier studies of MOS field oxides under low-field conditions, and accounts for the increased enhanced damage in pnp transistors

Keywords

bipolar analogue integrated circuits; radiation effects; damage; dose rate; junction isolation; lateral transistors; linear bipolar integrated circuits; npn transistors; pnp transistors; substrate transistors; Analog integrated circuits; Bipolar integrated circuits; Circuit testing; Costs; Integrated circuit technology; Isolation technology; Laboratories; Manufacturing; Network address translation; Propulsion;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.488762

Filename

488762