Title :
Effect of rapid thermal annealing on radiation hardening of MOS devices
Author :
Flament, O. ; Leray, J.L. ; Martin, F. ; Orsier, E. ; Pelloie, J.L. ; Truche, R. ; Devine, R.A.B.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
12/1/1995 12:00:00 AM
Abstract :
The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected. Data are in good agreement with a recently developed model of oxygen out-diffusion, (ii) the location across the wafer with a radial dependence. Results could be related to stress induced by thermal gradient
Keywords :
MOSFET; X-ray effects; radiation hardening (electronics); rapid thermal annealing; MOS devices; NMOS transistors; PMOS transistors; oxide trapped charge; oxygen out-diffusion; radiation hardening; rapid thermal annealing; stress; thermal gradient; CMOS process; CMOS technology; Furnaces; MOS devices; MOSFETs; Radiation hardening; Rapid thermal annealing; Rapid thermal processing; Temperature; Thermal stresses;
Journal_Title :
Nuclear Science, IEEE Transactions on
