• DocumentCode
    777885
  • Title

    Electron spin resonance evidence that E´γ centers can behave as switching oxide traps

  • Author

    Conley, John F., Jr. ; Lenahan, Patrick M. ; Lelis, Aivars J. ; Oldham, Timothy R.

  • Author_Institution
    Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA
  • Volume
    42
  • Issue
    6
  • fYear
    1995
  • fDate
    12/1/1995 12:00:00 AM
  • Firstpage
    1744
  • Lastpage
    1749
  • Abstract
    We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide tap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can “switch” charge state in response to changes in the voltage applied to the gate of a metal-oxide-semiconductor field-effect-transistor. Electron spin resonance measurements reveal that some E´γ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps
  • Keywords
    MOSFET; defect states; elemental semiconductors; hole traps; paramagnetic resonance; semiconductor device models; silicon; silicon compounds; E´γ centers; Si-SiO2; charge state; electron spin resonance; gate oxides; metal-oxide-semiconductor field-effect-transistor; spectroscopic evidence; switching oxide traps; Amorphous materials; Annealing; Charge carrier processes; Electron traps; Insulation; Laboratories; Paramagnetic resonance; Spectroscopy; Switches; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.488774
  • Filename
    488774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=777885