Title :
SEE results using high energy ions
Author :
Duzellier, S. ; Falguère, D. ; Moulière, L. ; Ecoffet, R. ; Buisson, J.
Author_Institution :
CERT-ONERA, Toulouse, France
fDate :
12/1/1995 12:00:00 AM
Abstract :
SEE data on SRAMs and DRAMs, obtained with low and high energy ions, are presented. The global response of these devices remained coherent using low or high energy beams (angle effects, pattern influences, multiple-bit error proportion, etc.), but discrepancies appeared, in some cases, in the threshold part of the sensitivity curves. These anomalies seem in relation with a track structure
Keywords :
DRAM chips; SRAM chips; integrated circuit testing; ion beam effects; space vehicle electronics; 256 kbit to 16 Mbit; 84 MeV to 33.6 GeV; DRAMs; LET threshold; SEE data; SEU; SRAMs; angle effects; global response; high energy ions; low energy ions; multiple-bit error proportion; onboard electronic subsystems; pattern influences; sensitivity curve threshold region; simulated galactic cosmic rays; track structure; Circuits; Cosmic rays; Costs; Electron accelerators; Electronic components; Electronic equipment testing; Life estimation; Particle accelerators; Qualifications; Random access memory;
Journal_Title :
Nuclear Science, IEEE Transactions on
