Recent Results Obtained with High Field, Internally Amplifying Semiconductor Radiation Detectors

Characterization of the gallium diffused junctions found useful as amplifying radiation detectors indicate a rather surprising window-junction depth relationship. The window, at only the self bias of the junction, has been measured to be a micron or so although the junction depth is ~50 microns. This is a result of the unusual diffusion process used - diffusion to 75 microns with subsequent removal of the heavily acceptor doped, first 25 micron region. Because of potential for low energy detection of these structures (which require thin windows) stress is placed upon window measurements. Measurements made of the response of these structures as photon detectors in the near infrared (0.7 - 1.1 micron) wavelength region are reported. Also initial results which indicate that the x-ray cutoff for these structures lies in the 44-60 Angstrom range.