Digital isolation amplifier in silicon-on-sapphire CMOS

The design and fabrication results of a monolithic four-channel digital isolation amplifier in a 0.5 mum silicon-on-sapphire technology is reported. The isolation device is manufactured in a single die, taking advantage of the isolation properties of the sapphire substrate. The individual isolation channels can operate in excess of 40 Mbit/s using digital phase-shift-keying modulation. Modulation of the input signal is used to increase immunity to errors at low input data rates. The device can tolerate ground bounces of 1 V/mus and isolate more than 800 V