Title :
Uniform 90-channel multiwavelength InAs/InGaAsP quantum dot laser
Author :
Liu, J. ; Lu, Z. ; Raymond, S. ; Poole, P.J. ; Barrios, P.J. ; Pakulski, G. ; Poitras, D. ; Xiao, G. ; Zhang, Z.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council, Ont.
Abstract :
A 93-channel multiwavelength laser with maximum channel intensity non-uniformity of 3.0 dB over a wavelength range from 1638 to 1646 nm was demonstrated on the basis of a single 4500 mum-long InAs/InGaAsP quantum dot Fabry-Perot cavity chip. All channels were stable because of inhomogeneous gain broadening due to statistically distributed sizes and geometries of self-assembled quantum dots
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum dot lasers; 1638 to 1646 nm; 4500 micron; InAs-InGaAsP; inhomogeneous gain broadening; maximum channel intensity nonuniformity; quantum dot Fabry-Perot cavity chip; self-assembled quantum dots; uniform 90-channel multiwavelength quantum dot laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070594
