• DocumentCode
    778213
  • Title

    40 Gbit=s waveguide avalanche photodiode with p-type absorption layer and thin InAlAs multiplication layer

  • Author

    Shimizu, S. ; Shiba, K. ; Nakata, T. ; Kasahara, K. ; Makita, K.

  • Author_Institution
    Dept. of Photonics, Ritsumeikan Univ., Kusatsu Shiga
  • Volume
    43
  • Issue
    8
  • fYear
    2007
  • Firstpage
    476
  • Lastpage
    477
  • Abstract
    Waveguide avalanche photodiodes exhibiting both wide bandwidth and high gain bandwidth product have been developed. An absorption layer includes a p-type quasi-field-formed layer and a multiplication layer consists of InAlAs with a low ionisation rate ratio. Optimisation of the design yielded superior performance such as a wide bandwidth of 36.5 GHz, a gain band width of 170 GHz and a high quantum efficiency of 0.75 A/W
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; light absorption; 170 GHz; 36.5 GHz; 40 Gbit/s; InAlAs; p-type absorption layer; p-type quasifield-formed layer; thin InAlAs multiplication layer; waveguide avalanche photodiode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070344
  • Filename
    4155610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=778213