A monolithic Ka-band 0.25 μm GaAs MESFET transmitter for high volume production

Author

Wang, Huei ; Yang, Daniel C. ; Aust, Michael V. ; Rezek, Edward A. ; Allen, Barry R. ; Fletcher, Louis A. ; Becker, Robert C.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

Volume

27

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1397

Lastpage

1404

Abstract

A monolithic Ka-band transmitter consisting of a voltage-controlled oscillator (VCO) and a power amplifier using 0.25 μm MESFET technology has been developed for high volume production. An output power of 21.5 dBm at 35.4 GHz with a tuning range of 600 MHz has been achieved. Hundreds of these monolithic transmitters have been fabricated, and an RF yield of 40% has ben achieved from the GaAs MMIC pilot line based on the total number of wafers started. The high yield obtained from this high level integration of multifunctional MMIC chips indicates the maturity of the design and processing capability of millimeter-wave (MMW) GaAs MESFET technology

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; integrated circuit manufacture; microwave amplifiers; microwave oscillators; power amplifiers; radar transmitters; variable-frequency oscillators; 0.25 micron; 35.4 GHz; GaAs MESFET transmitter; MMIC pilot line; RF yield; high volume production; monolithic Ka-band transmitter; multifunctional MMIC chips; output power; power amplifier; tuning range; voltage-controlled oscillator; Gallium arsenide; High power amplifiers; MESFETs; MMICs; Power amplifiers; Power generation; Production; Radiofrequency amplifiers; Transmitters; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.156443

Filename

156443