• DocumentCode
    778568
  • Title

    Total radiation dose at geostationary orbit

  • Author

    Bhat, B. Ravinarayana ; Upadhyaya, Nagesh ; Kulkarni, Ravi

  • Author_Institution
    Components Div., Indian Space Res. Organ., Bangalore, India
  • Volume
    52
  • Issue
    2
  • fYear
    2005
  • fDate
    4/1/2005 12:00:00 AM
  • Firstpage
    530
  • Lastpage
    534
  • Abstract
    Active semiconductor components in satellites are sensitive to accumulated ionization radiation dose. Radiation dose and shielding estimations for electronic components are usually carried out using NASA models of space radiation particle flux. Accurate measurement of accumulated dose during the life of a satellite is essential for optimizing radiation shielding design for electronic components. Dosimeters were designed using radiation sensitive field-effect transistors (RADFETs) and accumulated dose at geostationary orbit was measured. Radiation dose as measured by these dosimeters with spherical aluminum shields are presented and compared with NASA model doses.
  • Keywords
    artificial satellites; dosimetry; field effect transistors; radiation effects; NASA models; RADFETs; active semiconductor components; dosimeters; electronic components; geostationary orbit; radiation sensitive field-effect transistors; satellites; shielding estimations; space radiation particle flux; spherical aluminum shields; total ionisation radiation dose; Aluminum; Electronic components; Extraterrestrial measurements; FETs; Ionization; Ionizing radiation; MOSFET circuits; NASA; Satellites; Threshold voltage; Geostationary orbit; radiation sensitive field-effect transistor (RADFET); space radiation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.846881
  • Filename
    1420731