Surface acoustic wave characterization of PECVD films on gallium arsenide

Author

Hickernell, Fred S. ; Hickernell, Thomas S.

Author_Institution

Gov. Syst. & Technol. Group, Motorola Inc., Scottsdale, AZ, USA

Volume

42

Issue

3

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

410

Lastpage

415

Abstract

Surface-acoustic-wave (SAW) measurement techniques can be effectively used to determine the acoustic properties of dielectric and piezoelectric films. Such films can be used for the development of semiconductor-integrated microwave-frequency surface and bulk acoustic wave devices. The acoustic properties of silicon nitride, silicon oxynitride, silicon carbide, and TEOS glass, deposited by plasma-enhanced chemical-vapor-deposition (PECVD) on GaAs, have been characterized using linear arrays of SAW interdigital electrodes operating in the harmonic mode over the frequency region from 30 MHz to above 1.0 GHz. The elastic constants of these amorphous films have been determined by fitting theoretical dispersion curves to the measured SAW velocity characteristics. Frequency-dependent SAW propagation-loss values have been determined from the observed linear change in loss as a function of transducer separation. Preliminary measurements of the temperature coefficient of frequency (TCF) for SAW propagation of the films on GaAs are also given.<>

Keywords

III-V semiconductors; acoustic materials; dielectric thin films; elastic constants; gallium arsenide; plasma CVD coatings; surface acoustic waves; 30 MHz to 1.0 GHz; GaAs; PECVD films; SAW interdigital electrodes; SAW propagation-loss; SAW velocity; SiC; SiN; SiON; TEOS glass; acoustic properties; amorphous films; bulk acoustic wave devices; dielectric films; dispersion curves; elastic constants; gallium arsenide; linear arrays; plasma-enhanced chemical-vapor-deposition; semiconductor-integrated microwave-frequency devices; silicon carbide; silicon nitride; silicon oxynitride; surface acoustic wave; surface acoustic wave devices; temperature coefficient of frequency; transducer; Acoustic devices; Acoustic waves; Frequency; Piezoelectric films; Plasma measurements; Plasma properties; Semiconductor films; Silicon; Surface acoustic wave devices; Surface acoustic waves;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.384451

Filename

384451