Ultrafast characteristics of InGaP-InGaAlP laser amplifiers

Author

Tatum, Jim A. ; MacFarlane, Duncan L. ; Bowen, R.Chris ; Klimeck, Gerhard ; Frensley, William R.

Author_Institution

Erik Jonsson Sch. of Eng. & Comput. Sci., Texas Univ., Dallas, TX, USA

Volume

32

Issue

4

fYear

1996

fDate

4/1/1996 12:00:00 AM

Firstpage

664

Lastpage

669

Abstract

We characterize a visible, 670 nm, diode laser amplifier with respect to parameters of interest in short pulse generation and amplification. With a single pulse in the amplifier, we measure the differential gain and saturation energy of the amplifier, and changes in the optical spectrum of a pulse traveling through the amplifier. We also measure the ultrafast gain dynamics using a pump and probe technique. We find the ultrafast gain recovery time due to carrier heating is 400 fs±30 fs. Our results differ quantitatively from those reported for InGaAsP and AlGaAs amplifiers

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high-speed optical techniques; indium compounds; laser beams; laser variables measurement; optical saturation; semiconductor lasers; 400 fs; 670 nm; AlGaAs amplifiers; InGaAsP amplifiers; InGaP-InGaAlP; carrier heating; differential gain; diode laser amplifier; laser amplifiers; optical spectru; pump and probe technique; saturation energy; short pulse amplification; short pulse generation; ultrafast characteristics; ultrafast gain dynamics; ultrafast gain recovery time; Differential amplifiers; Diode lasers; Energy measurement; Gain measurement; Optical amplifiers; Optical pulses; Pulse amplifiers; Pulse generation; Pulse measurements; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.488841

Filename

488841