DocumentCode :
778656
Title :
Interband nonlinear optical generation in presence of intersubband light in asymmetric quantum wells
Author :
Neogi, Amp ; Takahashi, Yutaka ; Kawaguchi, Hitoshi
Author_Institution :
Fac. of Eng., Yamagata Univ., Japan
Volume :
32
Issue :
4
fYear :
1996
fDate :
4/1/1996 12:00:00 AM
Firstpage :
701
Lastpage :
711
Abstract :
The interband sum frequency generation process due to three-wave interaction of interband and intersubband coupling lights has been investigated in a semiconductor quantum well using the perturbational density matrix approach. The origin of the nonlinear process lies in the second-order susceptibility χc2-h1(2) arising due to the optical transition between the second conduction subband and the first heavy hole state. Both the sign and the magnitude of the second-order susceptibility of the well may be controlled by the carrier density level and the frequency of the intersubband field
Keywords :
carrier density; conduction bands; multiwave mixing; nonlinear optical susceptibility; optical frequency conversion; perturbation techniques; semiconductor quantum wells; asymmetric quantum wells; carrier density level; heavy hole state; interband coupling; interband nonlinear optical generation; interband sum frequency generation process; intersubband coupling; intersubband field; intersubband light; nonlinear process; optical transition; perturbational density matrix approach; second conduction subband; second-order susceptibility; semiconductor quantum well; three-wave interaction; Conducting materials; Frequency conversion; Gallium arsenide; Nonlinear optical devices; Nonlinear optics; Optical harmonic generation; Optical materials; Optical superlattices; Photonic band gap; Resonance;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.488845
Filename :
488845
Link To Document :
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