DocumentCode
778692
Title
Where do hot electrons come from? (MOSFETs)
Author
Frey, Jeffrey
Author_Institution
Maryland Univ., College Park, MD, USA
Volume
7
Issue
6
fYear
1991
Firstpage
31
Lastpage
34
Abstract
Troublesome hot electrons that are appearing in MOSFETs, even at reduced drain voltages, due to scattering in the device channel are discussed. The use of the concept of ´electron temperature´ to describe the energy spread that the electrons have as the result of the scattering is examined. The relationship between electron temperature and reliability is considered. The improvement in reliability that results from reducing the channel length, and thereby the amount of scattering, is discussed. The analysis of short-channel devices, is briefly addressed.<>
Keywords
hot carriers; insulated gate field effect transistors; reliability; ´electron temperature; MOSFETs; channel length reduction; device channel; energy spread; hot electrons; reliability; scattering; short-channel devices; Absorption; Acceleration; Electron emission; Electron optics; Kinetic energy; MOSFETs; Optical scattering; Phonons; Tellurium; Temperature distribution;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.101754
Filename
101754
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