• DocumentCode
    778692
  • Title

    Where do hot electrons come from? (MOSFETs)

  • Author

    Frey, Jeffrey

  • Author_Institution
    Maryland Univ., College Park, MD, USA
  • Volume
    7
  • Issue
    6
  • fYear
    1991
  • Firstpage
    31
  • Lastpage
    34
  • Abstract
    Troublesome hot electrons that are appearing in MOSFETs, even at reduced drain voltages, due to scattering in the device channel are discussed. The use of the concept of ´electron temperature´ to describe the energy spread that the electrons have as the result of the scattering is examined. The relationship between electron temperature and reliability is considered. The improvement in reliability that results from reducing the channel length, and thereby the amount of scattering, is discussed. The analysis of short-channel devices, is briefly addressed.<>
  • Keywords
    hot carriers; insulated gate field effect transistors; reliability; ´electron temperature; MOSFETs; channel length reduction; device channel; energy spread; hot electrons; reliability; scattering; short-channel devices; Absorption; Acceleration; Electron emission; Electron optics; Kinetic energy; MOSFETs; Optical scattering; Phonons; Tellurium; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/101.101754
  • Filename
    101754