Title :
Where do hot electrons come from? (MOSFETs)
Author_Institution :
Maryland Univ., College Park, MD, USA
Abstract :
Troublesome hot electrons that are appearing in MOSFETs, even at reduced drain voltages, due to scattering in the device channel are discussed. The use of the concept of ´electron temperature´ to describe the energy spread that the electrons have as the result of the scattering is examined. The relationship between electron temperature and reliability is considered. The improvement in reliability that results from reducing the channel length, and thereby the amount of scattering, is discussed. The analysis of short-channel devices, is briefly addressed.<>
Keywords :
hot carriers; insulated gate field effect transistors; reliability; ´electron temperature; MOSFETs; channel length reduction; device channel; energy spread; hot electrons; reliability; scattering; short-channel devices; Absorption; Acceleration; Electron emission; Electron optics; Kinetic energy; MOSFETs; Optical scattering; Phonons; Tellurium; Temperature distribution;
Journal_Title :
Circuits and Devices Magazine, IEEE
