DocumentCode :
77875
Title :
Configurable Input–Output Power Pad for Wafer-Scale Microelectronic Systems
Author :
Laflamme-Mayer, Nicolas ; Andre, Walder ; Valorge, Olivier ; Blaquiere, Yves ; Sawan, Mohamad
Author_Institution :
Electr. Eng. Dept., Ecole Polytech. Montreal, Montreal, QC, Canada
Volume :
21
Issue :
11
fYear :
2013
fDate :
Nov. 2013
Firstpage :
2024
Lastpage :
2033
Abstract :
We describe, in this paper, a new digital input-output power configurable PAD (CPAD) for a wafer-scale-based rapid prototyping platform for electronic systems. This wafer-scale platform includes a reconfigurable wafer-scale circuit that can interconnect any digital components manually deposited on its active alignment-insensitive surface. The whole platform is powered using a massive grid of embedded voltage regulators. Power is fed from the bottom side of the wafer using through silicon vias. The CPAD can be configured to provide CMOS standard voltages of 1.0, 1.5, 1.8, 2.0, 2.5, and 3.3 V using a single 3.3 V power supply. The digital I/O includes transistors sharing and is embedded within the regulation circuit by combining it with a turbo mode that insures high-speed operation. Fast load regulation is achieved with a 5.5-ns response time to a current step load for a maximum current of 110 mA per CPAD. The proposed circuit architecture benefits from a hierarchical arborescence topology where one master stage drives 16 CPADs with a very small quiescent current of 366 nA. The CPAD circuit and the master stage occupy a small area of 0.00847 and 0.00726 mm2, respectively, in CMOS 0.18-μm technology.
Keywords :
CMOS integrated circuits; integrated circuit interconnections; three-dimensional integrated circuits; voltage regulators; wafer-scale integration; CMOS standard voltages; CPAD circuit; arborescence topology; configurable input-output power pad; current 366 nA; digital I/O; digital component interconnection; digital input-output power configurable pad; massive grid; power supply; reconfigurable wafer-scale circuit; regulation circuit; size 0.18 mum; through silicon vias; transistors sharing; turbo mode; voltage 3.3 V; voltage regulators; wafer-scale microelectronic systems; wafer-scale platform; wafer-scale-based rapid prototyping platform; CMOS integrated circuits; Power supplies; Regulators; Silicon; Topology; Transistors; Voltage control; CMOS technology; WaferIC; configurable voltage reference; low-drop out regulator; prototyping platform; wafer-scale system;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2012.2223247
Filename :
6362278
Link To Document :
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