Title :
High-efficiency and high-power vertical-cavity surface-emitting laser designed for cryogenic applications
Author :
Bo Lu ; Wen-Lin Luo ; Hains, C. ; Cheng, J. ; Schneider, R.P. ; Choquette, R.P. ; Lear, K.L. ; Kilcoyne, S.P. ; Zolper, J.C.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
We report the first AlGaAs-GaAs vertical-cavity surface-emitting laser (VCSEL) that has been optimized for cryogenic applications near 77 K, with superior characteristics that include a high-output power (P/sub out/=22 mW at I=25 mA), high power conversion efficiency (/spl eta/d=32%), low threshold voltage (V/sub th/=1.75 V) and current (I/sub th/=1.7 mA), and low power dissipation (9 mW at P/sub out/=2.0 mW) for a 20-μm-diameter device.
Keywords :
III-V semiconductors; aluminium compounds; cryogenics; gallium arsenide; laser cavity resonators; optical design techniques; semiconductor lasers; surface emitting lasers; 1.75 V; 2 mW; 20 mum; 22 mW; 25 mA; 32 percent; 77 K; 9 mW; AlGaAs-GaAs; AlGaAs-GaAs vertical-cavity surface-emitting laser; cryogenic applications; high power conversion efficiency; high-efficiency; high-output power; high-power vertical-cavity surface-emitting laser; low power dissipation; low threshold voltage; Cryogenics; Optical design; Power conversion; Power dissipation; Power generation; Power lasers; Surface emitting lasers; Temperature; Threshold voltage; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
