X-band HBT VCO with high-efficiency CB buffer amplifier

Author

Wang, Nan-Lei ; Ho, Wu-Jing

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

Volume

27

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1439

Lastpage

1443

Abstract

A monolithic AlGaAs-GaAs HBT VCO with common-base (CB) buffer amplifier was demonstrated at X-band. Overall efficiency of 30% was achieved with 93-mW output power at 9.8 GHz. The MMIC chip is only 1 mm×2 mm, including the monolithic varactor diode. The circuit design offers several unique advantages: (1) the CB buffer amplifier reduces the frequency-pull effect from the external load; (2) the design for the oscillation condition and the output impedance match for power are separated; and (3) the overall efficiency can be high. A step-by-step design procedure is discussed

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave oscillators; tuning; varactors; variable-frequency oscillators; 30 percent; 9.8 GHz; AlGaAs-GaAs; HBT VCO; MMIC chip; SHF; X-band; buffer amplifier; common-base; design procedure; high-efficiency; monolithic varactor diode; Circuit synthesis; Diodes; Frequency; Heterojunction bipolar transistors; High power amplifiers; MMICs; Power amplifiers; Power generation; Varactors; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.156450

Filename

156450