Tutorial: temperature as an input to microelectronics-reliability models

Author

Lall, Pradeep

Author_Institution

Motorola Inc., Plantation, FL, USA

Volume

45

Issue

1

fYear

1996

fDate

3/1/1996 12:00:00 AM

Firstpage

3

Lastpage

9

Abstract

This tutorial discusses various modeling methodologies for temperature acceleration of microelectronic-device failures; there are situations in which some methodologies give-misleading results. The aim is to raise the level of understanding of the impact of temperature on reliability and to define the objectives of physics-based temperature modeling. There are alternatives to both the Arrhenius relation and the MilHdbk-217 approach to reliability. In Japan, Taiwan, Singapore, and Malaysia, a physics-of-failure approach is used by most companies. Philips in the Netherlands and the CADMP Alliance in the USA have developed methods and software to conduct physics-based reliability assessments

Keywords

failure analysis; integrated circuit modelling; integrated circuit reliability; reliability theory; Arrhenius relation; CADMP Alliance; Japan; Malaysia; MilHdbk-217; Singapore; Taiwan; activation energy; mean time to failure; microelectronic-device failures; microelectronics-reliability models; physics-based temperature modeling; physics-of-failure; reliability assessments; reliability prediction; temperature accelerated failures; Acceleration; Electronic equipment; Electrostatic discharge; Failure analysis; Integrated circuit reliability; Microelectronics; Stress; Temperature; Threshold voltage; Tutorial;

fLanguage

English

Journal_Title

Reliability, IEEE Transactions on

Publisher

ieee

ISSN

0018-9529

Type

jour

DOI

10.1109/24.488908

Filename

488908