Fabrication of broad-area laser diodes on a three-inch wafer by a solid-phase diffusion method

Author

Nagai, Y. ; Shigihara, K. ; Saito, H. ; Watanabe, H. ; Karakida, S. ; Otsubo, M. ; Ikeda, K.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

7

Issue

5

fYear

1995

fDate

5/1/1995 12:00:00 AM

Firstpage

464

Lastpage

466

Abstract

We have developed extremely uniform Zn diffusion on a three-inch GaAs-AlGaAs QW laser wafer by an open tube solid-phase diffusion technique and have applied it to fabrication of broad-area laser diodes (LD´s) for the first time using 3-inch full-wafer processing. Excellent uniformity of device characteristics have been obtained on a 3-inch wafer; threshold current distribution along the radial direction of a wafer is 356.2/spl plusmn/8.3 mA (1/spl sigma/), emission wavelength is 879.7/spl plusmn/0.6 nm (1/spl sigma/). Such high uniformity is caused by not only uniform Zn diffusion but also uniform epitaxial layer thickness over a three-inch wafer.<>

Keywords

III-V semiconductors; aluminium compounds; diffusion; gallium arsenide; optical fabrication; quantum well lasers; semiconductor growth; semiconductor technology; solid phase epitaxial growth; wafer-scale integration; 3 in; 356.2 mA; 879.7 nm; GaAs-AlGaAs; Zn; broad-area laser diode fabrication; device characteristics; emission wavelength; extremely uniform Zn diffusion; full-wafer processing; open tube solid-phase diffusion technique; radial direction; solid-phase diffusion method; three-inch GaAs-AlGaAs QW laser wafer; three-inch wafer; threshold current distribution; uniform epitaxial layer thickness; Annealing; Diode lasers; Epitaxial layers; Gallium arsenide; Large scale integration; Optical device fabrication; Optoelectronic devices; Substrates; Threshold current; Zinc oxide;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.384511

Filename

384511