Title :
Feedback effects in tapered broad-area semiconductor lasers and amplifiers
Author :
Bossert, D.J. ; Marciante, J.R. ; Wright, M.W.
Author_Institution :
Semicond. Laser Branch, Phillips Lab., Kirtland AFB, NM, USA
fDate :
5/1/1995 12:00:00 AM
Abstract :
A detailed experimental investigation of the effect of optical feedback upon the operation of high-power broad area InGaAs strained quantum well semiconductor lasers is presented. In particular, we examine the effect optical feedback has upon the beam quality of high-brightness lasers employing a tapered electrical contact. The far-field of such lasers is shown to degrade rapidly with power feedback ratios exceeding -30 dB, leading to a significantly reduced power in the central diffraction-limited far-field lobe. Far-field degradation is accompanied by dynamic instability and spectral broadening. Good beam quality and low intensity noise can be recovered, however, by rotating the feedback polarization.<>
Keywords :
III-V semiconductors; brightness; gallium arsenide; indium compounds; laser beams; laser feedback; laser noise; laser stability; light polarisation; optical rotation; quantum well lasers; spectral line breadth; InGaAs; beam quality; central diffraction-limited far-field lobe; dynamic instability; far-field; far-field degradation; feedback effects; feedback polarization rotation; good beam quality; high-brightness lasers; high-power broad area InGaAs strained quantum well semiconductor lasers; low intensity noise; optical feedback; power feedback ratios; reduced power; semiconductor laser amplifiers; spectral broadening; tapered broad-area semiconductor lasers; tapered electrical contact; Contacts; Degradation; Indium gallium arsenide; Laser beams; Laser feedback; Laser noise; Optical feedback; Power lasers; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE