Title :
A 5-Vp-p 100-ps GaAs pulse amplifier IC with improved pulse fidelity
Author :
Armstrong, Allan ; Wagner, Hans-Jürgen
Author_Institution :
Hewlett-Packard Co., Santa Rosa, CA, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
A GaAs differential pulse amplifier IC has been designed, fabricated, and tested which delivers 5 V peak to peak into 25 Ω with a 20-80% transition time of 100 ps and overshoot of less than 10%. The IC includes a continuously variable output attenuator, which allows the output amplitude to be adjusted between 0.1 and 5 V peak to peak with minimal effect on output transition time and overshoot. The IC exhibits no incomplete switching transients at the output. Circuit design techniques to minimize overshoot and avoid incomplete switching transients are explained and experimental data are supplied to support performance claims
Keywords :
III-V semiconductors; differential amplifiers; field effect integrated circuits; gallium arsenide; pulse amplifiers; 100 ps; 5 V; GaAs; continuously variable output attenuator; depletion-mode MESFET IC; differential pulse amplifier IC; switching transients; Differential amplifiers; Electrodes; Gallium arsenide; Optical amplifiers; Optical pulses; Pulse amplifiers; Pulse measurements; Pulse modulation; Switching circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
