DC-100-GHz frequency doublers in InP DHBT technology

Author

Puyal, Vincent ; Konczykowska, Agnieszka ; Nouet, Pascal ; Bernard, Serge ; Blayac, Sylvain ; Jorge, Filipe ; Riet, Muriel ; Godin, Jean

Author_Institution

OPTO+, ALCATEL Res. & Innovation, Marcoussis, France

Volume

53

Issue

4

fYear

2005

fDate

4/1/2005 12:00:00 AM

Firstpage

1338

Lastpage

1344

Abstract

Broad-band monolithic integrated active frequency doublers operating in dc-100-GHz frequency range are presented. Circuits are fabricated in a self-aligned InP double heterojunction bipolar transistor process. Three integrated doubler versions have been designed. Inductive peaking and active splitting effects are quantified and compared. Circuit measurements give sinusoidal output waveform at 100 GHz with an rms timing jitter of 400 fs. Circuits have a maximum conversion gain of +1 dB at 60 GHz. the fundamental suppression is better than 24 dB in the whole frequency range.

Keywords

III-V semiconductors; MMIC frequency convertors; UHF frequency convertors; UHF integrated circuits; VHF circuits; bipolar MIMIC; frequency multipliers; heterojunction bipolar transistors; indium compounds; 1 dB; 60 GHz; Gilbert cell; InP; InP DHBT technology; MIMIC; MMIC; active splitter; active splitting effects; broad-band monolithic circuits; circuit measurements; double heterojunction bipolar transistor; frequency doublers; frequency multiplier; inductive peaking; timing jitter; DH-HEMTs; Double heterojunction bipolar transistors; Fabrication; Frequency; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Logic devices; MMICs; PHEMTs; Active splitter; Gilbert cell; InP double heterojunction bipolar transistor (DHBT); doubler; frequency multiplier;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2005.845766

Filename

1420765