High-frequency high-power static induction transistor

Author

Tatsuta, M. ; Yamanaka, E.Y. ; Nishizawa, J.

Author_Institution

Tokin Corp., Sendai, Japan

Volume

1

Issue

2

fYear

1995

Firstpage

40

Lastpage

45

Abstract

This article demonstrates the characteristics, physical construction, and application for a newly commercialized high-frequency static induction transistor (SIT). The main features of this device are a lowering in the gate-to-source and gate-to-drain capacitances and an increase in the breakdown voltage and power rating. These enhancements were brought about as a result of the introduction of new and refined manufacturing technologies. The new high-frequency SIT device is being applied in applications such as medium wavelength radio transmitters and induction heaters

Keywords

capacitance; electric breakdown; induction heating; power transistors; radio transmitters; static induction transistors; breakdown voltage increase; capacitance lowering; gate-to-drain capacitance; gate-to-source capacitance; high-frequency; high-power; induction heaters; medium wavelength radio transmitters; power rating increase; static induction transistor; Commercialization; Induction generators; Manufacturing; Power generation; Power supplies; Radio transmitters; Refining; Surges; Temperature; Voltage;

fLanguage

English

Journal_Title

Industry Applications Magazine, IEEE

Publisher

ieee

ISSN

1077-2618

Type

jour

DOI

10.1109/2943.384626

Filename

384626