Title :
A temperature noise model for extrinsic FETs
Author_Institution :
Hewlett-Packard, Santa Rosa, CA, USA
fDate :
9/1/1992 12:00:00 AM
Abstract :
A resistor temperature noise model for FETs has been successfully applied to extrinsic FETs to predict the frequency dependence of minimum noise figure Fmin and associated gain GAopt. The model gives a fixed relationship between Fmin and GAopt with one fitting parameter Td. An extensive comparison to published results shows that the majority of FETs can be modeled with effective Td values (the temperature of the output resistor) between 300 and 700 K for all of the frequencies (8 to 94 GHz), gate lengths (0.8 to 0.1 μm), and material types examined. The analysis shows that InP-based MODFETs exhibit significantly lower Fmin and higher GAopt than conventional and pseudomorphic GaAs-based MODFETs of the same gate length. The results suggest a high Fmax is a key factor for low noise figure
Keywords :
electron device noise; equivalent circuits; field effect transistors; semiconductor device models; solid-state microwave devices; 0.8 to 1 micron; 300 to 700 K; 8 to 94 GHz; GaAs; InP; MESFET; MODFETs; extrinsic FETs; frequency dependence; gain; minimum noise figure; temperature noise model; Circuit noise; FETs; Frequency dependence; Frequency measurement; HEMTs; MODFETs; Noise figure; Predictive models; Resistors; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
