DocumentCode
779675
Title
AC characterisation of the p inverted buried channel heterostructure FET and its suitability for complementary electronics
Author
Kiely, P.A. ; Doctor, D.P. ; Vang, T.A. ; Taylor, G.W. ; Evaldsson, P.A. ; Claisse, P.R. ; Tell, B. ; Brown-Goebeler, K.F.
Author_Institution
Motorola Inc., Tempe, AZ, USA
Volume
142
Issue
2
fYear
1995
fDate
4/1/1995 12:00:00 AM
Firstpage
105
Lastpage
108
Abstract
The high-frequency characteristics of the inverted p-channel BCHFET are presented. A unity current gain frequency of 1.4 GHz for a 1.3 μm device is obtained. DC operation of a complementary inverter is shown using the n inversion channel NFET and the inverted p-channel BCHFET
Keywords
field effect transistors; inversion layers; logic gates; semiconductor device testing; 1.3 micron; 1.4 GHz; AC characterisation; BCHFET; DC operation; complementary electronics; high-frequency characteristics; n inversion channel NFET; p inverted buried channel heterostructure FET; unity current gain frequency;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:19951810
Filename
384703
Link To Document