Title :
AC characterisation of the p inverted buried channel heterostructure FET and its suitability for complementary electronics
Author :
Kiely, P.A. ; Doctor, D.P. ; Vang, T.A. ; Taylor, G.W. ; Evaldsson, P.A. ; Claisse, P.R. ; Tell, B. ; Brown-Goebeler, K.F.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fDate :
4/1/1995 12:00:00 AM
Abstract :
The high-frequency characteristics of the inverted p-channel BCHFET are presented. A unity current gain frequency of 1.4 GHz for a 1.3 μm device is obtained. DC operation of a complementary inverter is shown using the n inversion channel NFET and the inverted p-channel BCHFET
Keywords :
field effect transistors; inversion layers; logic gates; semiconductor device testing; 1.3 micron; 1.4 GHz; AC characterisation; BCHFET; DC operation; complementary electronics; high-frequency characteristics; n inversion channel NFET; p inverted buried channel heterostructure FET; unity current gain frequency;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19951810
