Title :
Unified model for collector charge in heterojunction bipolar transistors
Author :
Rudolph, Matthias ; Doerner, Ralf ; Beilenhoff, Klaus ; Heymann, Peter
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany
fDate :
7/1/2002 12:00:00 AM
Abstract :
The base-collector capacitance and the collector transit-time in GaAs-based heterojunction bipolar transistors depend not only on base-collector voltage, but also on collector current. This has to be taken into account in a large-signal model. However, since collector transit-time and capacitance are both caused by the charge stored in the collector space-charge region, it is not possible to model them independently of each other. This paper investigates the interrelation between collector capacitance and transit-time due to transcapacitance effects, and presents an analytical unified description for both quantities, that is derived from measurement-extracted small-signal equivalent circuits. The model is verified by comparison of simulation and measurement data
Keywords :
III-V semiconductors; capacitance; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; GaAs-based heterojunction bipolar transistors; base-collector capacitance; base-collector voltage; collector capacitance; collector capacitance/transit-time interrelation; collector current; collector space-charge region; collector transit-time; heterojunction bipolar transistors; large-signal model; measurement data; measurement-extracted small-signal equivalent circuits; model verification; simulation; stored charge; transcapacitance effects; unified collector charge model; Capacitance measurement; Circuit simulation; Current density; Equivalent circuits; Helium; Heterojunction bipolar transistors; Linearity; Radio frequency; Semiconductor device modeling; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2002.800425
