• DocumentCode
    779967
  • Title

    Design Criteria for Wide Range Gamma Radiacs Using Semiconductor Diode Detectors

  • Author

    Wesley, E.J. ; Joseph, W.F.

  • Author_Institution
    U. S. Naval Radiological Defense Laboratory San Francisco, California
  • Volume
    13
  • Issue
    3
  • fYear
    1966
  • fDate
    6/1/1966 12:00:00 AM
  • Firstpage
    541
  • Lastpage
    552
  • Abstract
    The report covers the application of silicon semiconductor detectors to a wide-range, gamma-ray doserate meter using the detectors in a pulse counting mode. It reviews pertinent circuit and detector characteristics that establish the doserate ranges that can be covered, the energy dependence to be expected from both large lithium-drifted detectors and very small silicon junction diodes, and finally the stability requirements imposed on the electronics by the pulse mode of operation. Methods of tailoring the photon energy response of semiconductor detectors are reviewed. Particular attention is given to the effect on design of amplifier and detector noise and variations in the noise level. One example of a combination of detectors to cover the doserate range from 0.2mR/h to 2000 R/h is shown. The report supports the conclusion that it is practical to make a survey meter, using silicon semiconductor detectors, that covers both the health physics and high doserate ranges of interest in military radiac design.
  • Keywords
    Circuit stability; Gamma ray detection; Gamma ray detectors; Noise level; Pulse amplifiers; Pulse circuits; Radiation monitoring; Semiconductor device noise; Semiconductor diodes; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1966.4324139
  • Filename
    4324139