DocumentCode :
779967
Title :
Design Criteria for Wide Range Gamma Radiacs Using Semiconductor Diode Detectors
Author :
Wesley, E.J. ; Joseph, W.F.
Author_Institution :
U. S. Naval Radiological Defense Laboratory San Francisco, California
Volume :
13
Issue :
3
fYear :
1966
fDate :
6/1/1966 12:00:00 AM
Firstpage :
541
Lastpage :
552
Abstract :
The report covers the application of silicon semiconductor detectors to a wide-range, gamma-ray doserate meter using the detectors in a pulse counting mode. It reviews pertinent circuit and detector characteristics that establish the doserate ranges that can be covered, the energy dependence to be expected from both large lithium-drifted detectors and very small silicon junction diodes, and finally the stability requirements imposed on the electronics by the pulse mode of operation. Methods of tailoring the photon energy response of semiconductor detectors are reviewed. Particular attention is given to the effect on design of amplifier and detector noise and variations in the noise level. One example of a combination of detectors to cover the doserate range from 0.2mR/h to 2000 R/h is shown. The report supports the conclusion that it is practical to make a survey meter, using silicon semiconductor detectors, that covers both the health physics and high doserate ranges of interest in military radiac design.
Keywords :
Circuit stability; Gamma ray detection; Gamma ray detectors; Noise level; Pulse amplifiers; Pulse circuits; Radiation monitoring; Semiconductor device noise; Semiconductor diodes; Silicon;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1966.4324139
Filename :
4324139
Link To Document :
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