Title :
Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range
Author :
Rodriguez, J.B. ; Christol, P. ; Ouvrard, A. ; Chevrier, F. ; Grech, P. ; Joullié, A.
Author_Institution :
CEM2, Univ. Montpellier II, France
fDate :
3/17/2005 12:00:00 AM
Abstract :
A p-i-n superlattice photovoltaic detector is presented, operating uncooled in the 3-5 μm mid-wavelength infrared region. The active zone of the detector device, grown by molecular beam epitaxy on a p-type GaSb substrate, is made of 150 periods of strain compensated InAs/InSb/GaSb (10/1/10 monolayers) superlattice (SL). The SL detector exhibited at 293 K a cutoff wavelength of 5.9 μm, an absorption coefficient of 5×103 cm-1 and a responsivity of 0.7 mA/W at 3.5 μm.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; infrared detectors; molecular beam epitaxial growth; p-i-n photodiodes; semiconductor superlattices; 293 K; 3 to 5 micron; 3.5 micron; 5.9 micron; InAs-InSb-GaSb; absorption coefficient; cutoff wavelength; mid-wavelength infrared range detector; molecular beam epitaxy; monolayers; p i n photovoltaic detector; photodiodes; responsivity; strain compensated active zone; superlattice photovoltaic detector; uncooled photovoltaic detector;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20058045
