Heavy ion SEU immunity of a GaAs complementary HIGFET circuit fabricated on a low temperature grown buffer layer

Author

Marshall, Paul W. ; Dale, Cheryl J. ; Weatherford, Todd ; Carts, Martin ; McMorrow, Dale ; Peczalski, Andy ; Baier, Steve ; Nohava, James ; Skogen, John

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

1850

Lastpage

1855

Abstract

We compare dynamic SEU characteristics of GaAs complementary HIGFET devices fabricated on conventional semi-insulating substrates versus low temperature grown GaAs (LT GaAs) buffer layers. Heavy ion test results on shift register and flip-flop devices from the same process lot demonstrate that the LT GaAs layer provides immunity from upsets, even at an LET value of 90 MeV·cm²/mg. This result is also consistent with pulsed laser measurements performed on the same flip-flop circuits used in the ion test

Keywords

III-V semiconductors; field effect logic circuits; flip-flops; gallium arsenide; ion beam effects; shift registers; GaAs; LET; complementary HIGFET circuit; dynamic SEU characteristics; flip-flop; heavy ion immunity; low temperature grown buffer layer; pulsed laser measurements; semi-insulating substrate; shift register; upsets; Buffer layers; Circuit testing; Flip-flops; Gallium arsenide; Optical pulses; Performance evaluation; Pulse circuits; Pulse measurements; Shift registers; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489226

Filename

489226