Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF Applications

Author

Hong, Seung-Ho ; Choi, Gil-Bok ; Baek, Rock-Hyun ; Kang, Hee-Sung ; Jung, Sung-Woo ; Jeong, Yoon-Ha

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang

Volume

29

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

775

Lastpage

777

Abstract

RF characteristics of a nanoscale MOSFET are measured and analyzed at temperatures ranging from 4.2 to 300 K for deep-space RF applications. This device shows a 197-GHz current gain cutoff frequency (f_T) and a 162-GHz maximum oscillation frequency (f_max) when operating at liquid-helium temperature, which represent a 60% and 80% improvement compared to room temperature performances, respectively, f_T continually improves as the temperature decreases to near-liquid-helium temperature due to the decrease of gate capacitance (C_gg). f_max decreases as the temperature is lowered below 25 K due to the increase of gate resistance (R_g).

Keywords

MOSFET; nanoelectronics; MOSFET; gate capacitance; gate resistance; near-liquid-helium temperature; temperature 4.2 K to 300 K; CMOS technology; Cryogenics; Cutoff frequency; Extraterrestrial measurements; MOSFET circuits; Nanomaterials; Radio frequency; Temperature distribution; Temperature sensors; Voltage; Cutoff frequency; low temperature; maximum oscillation frequency; nanoscale MOSFET;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2000614

Filename

4558088