Fabrication and Characterization of Carbon Nanotubes Integrated on Field-Emission Diode

Author

Tsai, J.T.H. ; Li, J. G S

Author_Institution

Grad. Inst. of Electro-Opt. Eng., Tatung Univ., Taipei

Volume

29

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

691

Lastpage

693

Abstract

Carbon nanotubes (CNTs) deposited by electrophoresis on a free-standing thin metal film edge are demonstrated. These CNTs act as electron field emitter which was integrated on the cathode of the field-emission vacuum diode. This diode exhibits a low reverse leakage current (<10^-11) with high on-off ratio of 10⁶. Owing to the low turn-on voltage of the nanosized CNTs, the field-emission diode exhibited less power consumption compared with the conventional vacuum-tube diode. Electronic tests of this vacuum diode perform its fast switching speed ability and high voltage rectification. This approach presents a route to use nanomaterials with a microelectromechanical system process to develop high-speed vacuum microelectronics.

Keywords

carbon nanotubes; cathodes; diodes; electron field emission; electrophoretic coating techniques; leakage currents; metallic thin films; nanotube devices; rectification; vacuum microelectronics; C; carbon nanotube integration; electron field emitter; electronic test; electrophoresis; field-emission diode; field-emission vacuum diode cathode; free-standing thin metal film edge; high-speed vacuum microelectronics; microelectromechanical system process; reverse leakage current; switching speed ability; voltage rectification; Carbon nanotubes; Cathodes; Diodes; Electrokinetics; Electron emission; Electronic equipment testing; Energy consumption; Fabrication; Leakage current; Low voltage; Carbon nanotubes (CNTs); diodes; electron emission; field emission; vacuum microelectronics;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2000618

Filename

4558092