• DocumentCode
    780775
  • Title

    Threshold voltage shift compensated active pixel sensor array for digital X-ray imaging in a-Si technology

  • Author

    Safavian, N. ; Lai, J. ; Rowlands, J. ; Nathan, A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Ont., Canada
  • Volume
    41
  • Issue
    7
  • fYear
    2005
  • fDate
    3/31/2005 12:00:00 AM
  • Firstpage
    411
  • Lastpage
    412
  • Abstract
    A new active pixel sensor for X-ray digital imaging using amorphous silicon thin-film transistors (a-Si TFTs) is proposed. Simulation results show that this new APS structure is fully capable of compensating for variations in threshold voltage (VT) of a-Si TFTs under prolonged gate voltage stress.
  • Keywords
    X-ray imaging; amorphous semiconductors; image sensors; silicon; thin film transistors; APS structure; Si; a-Si technology; active pixel sensor array; amorphous silicon thin-film transistors; digital X-ray imaging; prolonged gate voltage stress; threshold voltage shift;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20058232
  • Filename
    1421232
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=780775