Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs

Author

Bedell, Stephen W. ; Majumdar, Amlan ; Ott, John A. ; Arnold, John ; Fogel, Keith ; Koester, Steven J. ; Sadana, Devendra K.

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY

Volume

29

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

811

Lastpage

813

Abstract

The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs.

Keywords

Ge-Si alloys; MOSFET; hole mobility; silicon-on-insulator; substrates; Ge p-channel MOSFET; Ge-on-insulator; Si channel P-MOSFET; channel conductance; hole mobility; hole transport characteristics; mobility scaling; short-channel length; silicon-germanium-on-insulator substrates; Capacitive sensors; Character generation; Conducting materials; Dielectric substrates; FETs; Fabrication; Germanium silicon alloys; MOSFET circuits; Silicon germanium; Tin; Germanium; MOSFET; silicon-germanium-on-insulator (SGOI); strain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2000713

Filename

4558105