DocumentCode :
780904
Title :
An AC conductance technique for measuring self-heating in SOI MOSFET´s
Author :
Tu, Robert H. ; Wann, Clement ; King, Joseph C. ; Ko, Ping K. ; Hu, Chenming
Author_Institution :
Electron. Res. Lab., California Univ., Berkeley, CA, USA
Volume :
16
Issue :
2
fYear :
1995
Firstpage :
67
Lastpage :
69
Abstract :
In this paper, we present a new technique for isolating the electrical behavior of an SOI MOSFET´s from the self-heating effect using an AC conductance method. This method reconstructs an I-V curve by integrating high frequency output conductance data. The heating effect is eliminated when the frequency is much higher than the inverse of the thermal time constant of the SOI device. We present measurement results from SOI MOSFET´s that demonstrate that heating can indeed be significant in SOI devices.<>
Keywords :
MOSFET; electric admittance measurement; semiconductor device testing; silicon-on-insulator; AC conductance technique; HF output conductance data; I-V curve reconstruction; SOI MOSFET; Si; self-heating measurement; Electric resistance; Electric variables measurement; Electrical resistance measurement; Frequency; MOSFET circuits; Pulse measurements; Resistance heating; Senior members; Temperature dependence; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.386025
Filename :
386025
Link To Document :
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