DocumentCode :
780919
Title :
Electrical Properties of Amorphous 
Thin Film for RF MIM Capacitors
Author :
Cho, Kyung-Hoon ; Choi, Chang-Hak ; Hong, Kyoung Pyo ; Choi, Joo-Young ; Jeong, Young Hun ; Nahm, Sahn ; Kang, Chong-Yun ; Yoon, Seok-Jin ; Lee, Hwack-Joo
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Univ., Seoul
Volume :
29
Issue :
7
fYear :
2008
fDate :
7/1/2008 12:00:00 AM
Firstpage :
684
Lastpage :
687
Abstract :
Amorphous Bi5Nb3O15(B5 N3) film grown at 300degC showed a high-k value of 71 at 100 kHz, and similar k value was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/mum2 and a low dissipation factor of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm2 at 1 V. The quadratic and linear voltage coefficient of capacitances of the B5N3 film were 438 ppm/V2 and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/degC at 100 kHz. These results confirmed the potential of the amorphous B5N3 film as a good candidate material for a high-performance metal-insulator-metal capacitors.
Keywords :
MIM structures; amorphous state; bismuth compounds; capacitors; high-k dielectric thin films; leakage currents; Bi5Nb3O15; RF MIM capacitors; amorphous thin film; capacitance density; electrical properties; frequency 0.5 GHz to 5.0 GHz; frequency 100 kHz; linear voltage coefficient; low dissipation factor; low leakage-current density; low temperature coefficient; metal-insulator-metal capacitors; quadratic voltage coefficient; temperature 300 C; voltage 1 V; Amorphous materials; Capacitance; Electrodes; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Radio frequency; Sputtering; Temperature; Voltage; $hbox{Bi}_{5}hbox{Nb}_{3}hbox{O}_{15}$ $k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2000911
Filename :
4558109
Link To Document :
