The effects of plasma etching induced gate oxide degradation on MOSFET´s 1/f noise

Author

Hu, Chun ; Zhao, Ji ; Li, G.P. ; Liu, Patrick ; Worley, Eugene ; White, Joe ; Kjar, Ray

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA

Volume

16

Issue

2

fYear

1995

Firstpage

61

Lastpage

63

Abstract

The effects of the plasma etching process induced gate oxide damages on device´s low frequency noise behavior are investigated on MOSFET´s fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process.<>

Keywords

1/f noise; MOSFET; electron traps; hole traps; semiconductor device noise; sputter etching; 1/f noise; 100 Hz to 1 kHz; LF noise behavior; MOSFET; antenna effect; field plate perimeter/gate area ratio; gate oxide damage; gate oxide degradation; low frequency noise; noise spectrum; nonuniform distribution; oxide traps distribution; plasma etching induced degradation; small geometry devices; Circuit noise; Degradation; Etching; Geometry; Low-frequency noise; MOSFET circuits; Plasma applications; Plasma devices; Signal to noise ratio; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.386027

Filename

386027