Particle dependence of the gallium vacancy production in irradiated n-type gallium arsenide

Author

Khanna, S.M. ; Jorio, A. ; Carlone, C. ; Parenteau, M. ; Houdayer, A. ; Gerdes, J.W., Jr.

Author_Institution

Defence Res. Establ., Ottawa, Ont., Canada

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2095

Lastpage

2103

Abstract

The relative introduction rate of the gallium vacancy in n-type GaAs irradiated with ⁶⁰Co γ rays, 7 MeV electrons, fusion (14 MeV) and fission (1 MeV) neutrons, protons (0.6 to 200 MeV), deuterons (1 to 10 MeV), α particles (2.5 to 10 MeV), lithium (5 to 20 MeV) and oxygen ions (10 to 30 MeV) has been determined. Effects of annealing are reported. The measured introduction rates obtained with proton irradiation for energies up to 10 MeV, and for the heavy ions agree reasonably well with Rutherford scattering, NIEL calculations and the TRIM simulation. The results for electron irradiation also agree with the corresponding NIEL calculations

Keywords

III-V semiconductors; alpha-particle effects; annealing; deuteron effects; electron beam effects; gallium arsenide; gamma-ray effects; ion beam effects; neutron effects; photoluminescence; proton effects; vacancies (crystal); α-particle irradiation; 0.6 to 200 MeV; ⁶⁰Co γ ray irradiation; Ga vacancy production; GaAs; Li ion irradiation; NIEL calculations; O ion irradiation; Rutherford scattering; TRIM simulation; annealing effects; deuteron irradiation; electron irradiation; fission neutron irradiation; fusion neutron irradiation; heavy ion irradiation; n-type GaAs; photoluminescence; proton irradiation; radiation damage; relative introduction rate; Electrons; Energy loss; Gallium arsenide; Hall effect; III-V semiconductor materials; Neutrons; Particle production; Protons; Radiation detectors; Virtual colonoscopy;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489258

Filename

489258