Title :
Particle dependence of the gallium vacancy production in irradiated n-type gallium arsenide
Author :
Khanna, S.M. ; Jorio, A. ; Carlone, C. ; Parenteau, M. ; Houdayer, A. ; Gerdes, J.W., Jr.
Author_Institution :
Defence Res. Establ., Ottawa, Ont., Canada
fDate :
12/1/1995 12:00:00 AM
Abstract :
The relative introduction rate of the gallium vacancy in n-type GaAs irradiated with 60Co γ rays, 7 MeV electrons, fusion (14 MeV) and fission (1 MeV) neutrons, protons (0.6 to 200 MeV), deuterons (1 to 10 MeV), α particles (2.5 to 10 MeV), lithium (5 to 20 MeV) and oxygen ions (10 to 30 MeV) has been determined. Effects of annealing are reported. The measured introduction rates obtained with proton irradiation for energies up to 10 MeV, and for the heavy ions agree reasonably well with Rutherford scattering, NIEL calculations and the TRIM simulation. The results for electron irradiation also agree with the corresponding NIEL calculations
Keywords :
III-V semiconductors; alpha-particle effects; annealing; deuteron effects; electron beam effects; gallium arsenide; gamma-ray effects; ion beam effects; neutron effects; photoluminescence; proton effects; vacancies (crystal); α-particle irradiation; 0.6 to 200 MeV; 60Co γ ray irradiation; Ga vacancy production; GaAs; Li ion irradiation; NIEL calculations; O ion irradiation; Rutherford scattering; TRIM simulation; annealing effects; deuteron irradiation; electron irradiation; fission neutron irradiation; fusion neutron irradiation; heavy ion irradiation; n-type GaAs; photoluminescence; proton irradiation; radiation damage; relative introduction rate; Electrons; Energy loss; Gallium arsenide; Hall effect; III-V semiconductor materials; Neutrons; Particle production; Protons; Radiation detectors; Virtual colonoscopy;
Journal_Title :
Nuclear Science, IEEE Transactions on
