Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides

Author

Paillet, P. ; Autran, Jean-Luc ; Leray, Jean-Luc ; Aspar, B. ; Auberton-Herve, A.J.

Author_Institution

CEA, Centre d´Etudes de Bruyeres-le-Chatel

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2108

Lastpage

2113

Abstract

Electron and hole trapping and detrapping have been investigated in new SIMOX buried oxides of different thicknesses (80 to 400 nm) after X-ray irradiation. Isochronal annealing and thermally stimulated current results are presented along with trap densities and cross section values extracted from static measurements on n-channel MOSFETs. The charge trapping properties are shown to be similar in the different SIMOX oxides. Charge detrapping results show the extension of the trapped charge distribution towards higher energy than in thermal SiO²

Keywords

MOSFET; SIMOX; X-ray effects; annealing; buried layers; electron traps; hole traps; thermally stimulated currents; SIMOX buried oxides; Si-SiO₂; X-ray irradiation; charge detrapping; charge trapping; cross sections; isochronal annealing; n-channel MOSFETs; static measurements; thermally stimulated currents; Annealing; Charge carrier processes; Current measurement; Density measurement; Electron traps; Low voltage; MOSFETs; Manufacturing; Thickness measurement; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489260

Filename

489260