Title :
Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides
Author :
Paillet, P. ; Autran, Jean-Luc ; Leray, Jean-Luc ; Aspar, B. ; Auberton-Herve, A.J.
Author_Institution :
CEA, Centre d´Etudes de Bruyeres-le-Chatel
fDate :
12/1/1995 12:00:00 AM
Abstract :
Electron and hole trapping and detrapping have been investigated in new SIMOX buried oxides of different thicknesses (80 to 400 nm) after X-ray irradiation. Isochronal annealing and thermally stimulated current results are presented along with trap densities and cross section values extracted from static measurements on n-channel MOSFETs. The charge trapping properties are shown to be similar in the different SIMOX oxides. Charge detrapping results show the extension of the trapped charge distribution towards higher energy than in thermal SiO2
Keywords :
MOSFET; SIMOX; X-ray effects; annealing; buried layers; electron traps; hole traps; thermally stimulated currents; SIMOX buried oxides; Si-SiO2; X-ray irradiation; charge detrapping; charge trapping; cross sections; isochronal annealing; n-channel MOSFETs; static measurements; thermally stimulated currents; Annealing; Charge carrier processes; Current measurement; Density measurement; Electron traps; Low voltage; MOSFETs; Manufacturing; Thickness measurement; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
