Charge trapping versus buried oxide thickness for SIMOX structures

Author

Lawrence, R.K. ; Ioannou, D.E. ; Hughes, H.L. ; McMarr, P.J. ; Mrstik, B.J.

Author_Institution

ARACOR, Washington, DC, USA

Volume

42

Issue

6

fYear

1995

fDate

12/1/1995 12:00:00 AM

Firstpage

2114

Lastpage

2121

Abstract

Radiation induced charge trapping versus Buried-Oxide (BOX) thickness on various Separation-by-IMplantation-of-OXygen (SIMOX) buried oxides has been determined. An inflection point has been observed in the voltage shift versus buried oxide thickness relationship. As such, the radiation-induced voltage shifts for thin buried-oxides are greater than what could be expected from a simple square-law relationship. However, for irradiation applied fields higher than that of typical buried-oxide fringing fields the thickness relationship obeys a square-law. These results can be explained by the location and magnitude of the radiation induced oxide charge centroid and its relationship to the BOX thickness. The location of the centroid for trapped positive charge is dependent on the radiation-induced hole mobility, which is related to SIMOX processing, as well as on geometry and charge saturation

Keywords

SIMOX; X-ray effects; buried layers; hole mobility; hole traps; SIMOX structures; buried oxide thickness; charge centroid; charge saturation; fringing field; hole mobility; radiation induced charge trapping; voltage shift; Ellipsometry; Geometry; Laboratories; Material properties; Materials testing; Monitoring; Semiconductor films; Silicon; Spectroscopy; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.489261

Filename

489261