Title :
Monolithic integration of resonant tunneling diodes and FET´s for monostable-bistable transition logic elements (MOBILE´s)
Author :
Chen, Kevin J. ; Akeyoshi, Tomoyuki ; Maezawa, Koichi
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
A MOBILE (monostable-bistable transition logic element), employing two n-type negative differential resistance devices connected in series, is a functional logic gate with the advantages of multiple inputs and multiple functions. In this paper, a novel approach to achieve MOBILE operation is demonstrated using monolithic integration of resonant tunneling diodes (RTD) and FETs. In our new integration structure, an RTD and FET are connected in parallel. This structure offers several advantages including separate optimization of RTD´s and FET´s, and flexible circuit design abilities. For a single-input MOBILE gate, inverter operation at room temperature is demonstrated as the evidence of monostable-to-bistable transition.<>
Keywords :
field effect logic circuits; gallium arsenide; logic gates; monolithic integrated circuits; negative resistance devices; resonant tunnelling diodes; AlAs-GaAsIn; FETs; GaAs-AlGaAs; MOBILE; RTD; inverter operation; logic gate; monolithic integration; monostable-bistable transition logic elements; multiple functions; multiple inputs; n-type NDR devices; negative differential resistance; parallel connection; resonant tunneling diodes; room temperature operation; Circuit synthesis; Design optimization; Diodes; FETs; Inverters; Logic devices; Logic gates; Monolithic integrated circuits; Resonant tunneling devices; Temperature;
Journal_Title :
Electron Device Letters, IEEE