Title :
Test CMOS/SOS RAM for transient radiation upset comparative research and failure analysis
Author :
Nikiforov, A.Y. ; Poljakov, I.V.
Author_Institution :
Specialized Electronic Systems, Moscow, Russia
fDate :
12/1/1995 12:00:00 AM
Abstract :
The test Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) with eight types of memory cells was designed and tested at high dose rates with a flash X-ray machine and laser simulator. The memory cell (MC) design with additional transistors and RC-chain was found to be upset free up to 2×1012 rad(Si)/s. An “inversion” effect was discovered in which almost 100% logic upset was observed in poorly protected memory cell arrays at very high dose rates
Keywords :
CMOS memory circuits; X-ray effects; failure analysis; field effect memory circuits; integrated circuit testing; laser beam effects; random-access storage; transient analysis; RC-chain; failure analysis; flash X-ray machine; inversion effect; laser simulator; logic upset; memory cell array; test CMOS/SOS RAM; transient radiation upset; transistors; Electronic equipment testing; Failure analysis; Ionizing radiation; Logic arrays; Random access memory; Read-write memory; Semiconductor device testing; System testing; Transient analysis; X-ray lasers;
Journal_Title :
Nuclear Science, IEEE Transactions on
