DocumentCode
78101
Title
Demonstration of wafer-level light emitting diode with very high output power
Author
Yibin Zhang ; Fei Xu ; Desheng Zhao ; Hongjuan Huang ; Wei Wang ; Jianwei Xu ; Yong Cai ; Guangyi Shi ; Guojun Lu ; Zhenlin Miao ; Yundong Qi ; Baoshun Zhang
Author_Institution
Key Lab. of Nanodevices, Suzhou Inst. of Nano-tech & Nano-bionics, Suzhou, China
Volume
50
Issue
25
fYear
2014
fDate
12 4 2014
Firstpage
1970
Lastpage
1972
Abstract
Based on the optimised high-voltage network design and the resistance matching technique, a wafer-level light emitting diode (WL-LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum efficiency of the fabricated WL-LED was measured to be 24% at a driving current of 4 A.
Keywords
electric resistance; light emitting diodes; current 4 A; driving current; external quantum efficiency; high-voltage network design; light output power; power 157 W; resistance matching technique; wafer-level light emitting diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2014.3657
Filename
6975684
Link To Document