DocumentCode :
78101
Title :
Demonstration of wafer-level light emitting diode with very high output power
Author :
Yibin Zhang ; Fei Xu ; Desheng Zhao ; Hongjuan Huang ; Wei Wang ; Jianwei Xu ; Yong Cai ; Guangyi Shi ; Guojun Lu ; Zhenlin Miao ; Yundong Qi ; Baoshun Zhang
Author_Institution :
Key Lab. of Nanodevices, Suzhou Inst. of Nano-tech & Nano-bionics, Suzhou, China
Volume :
50
Issue :
25
fYear :
2014
fDate :
12 4 2014
Firstpage :
1970
Lastpage :
1972
Abstract :
Based on the optimised high-voltage network design and the resistance matching technique, a wafer-level light emitting diode (WL-LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum efficiency of the fabricated WL-LED was measured to be 24% at a driving current of 4 A.
Keywords :
electric resistance; light emitting diodes; current 4 A; driving current; external quantum efficiency; high-voltage network design; light output power; power 157 W; resistance matching technique; wafer-level light emitting diode;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.3657
Filename :
6975684
Link To Document :
بازگشت