Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors

Author

Tan, Kian-Ming ; Fang, Wei-Wei ; Yang, Mingchu ; Liow, Tsung-Yang ; Lee, Rinus T P ; Balasubramanian, Narayanan ; Yeo, Yee-Chia

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

29

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

750

Lastpage

752

Abstract

We report the first demonstration of a p-channel multiple-gate (trigate) FinFET with a liner stressor comprising diamond-like carbon (DLC) film. We also report on the detailed process that enables the adhesion of DLC with ultrahigh compressive stress on the three-dimension topology of the FinFET structure. The intrinsic compressive stress for the DLC film is 6 GPa, the highest ever reported for a liner stressor formed over a multiple-gate device structure or FinFET. A high stress-thickness product was successfully realized without film delamination. This leads to a very significant drive current boost for the FinFET with DLC liner stressor as compared to a control FinFET without the DLC liner.

Keywords

MOSFET; adhesion; diamond-like carbon; 3D topology; DLC liner stressor; compressive stress; diamond-like carbon film; diamond-like carbon liner; multiple-gate FinFET; multiple-gate device structure; p-channel multiple-gate field-effect transistors; pressure 6 GPa; trigate FinFET; Adhesives; Capacitive sensors; Compressive stress; Diamond-like carbon; Etching; FETs; FinFETs; Silicon compounds; Silicon germanium; Stress control; Contact etch stop layer (CESL); FinFET; diamond-like carbon (DLC); multiple-gate; strain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.923710

Filename

4558123