Title :
1.3-μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE
Author :
Yu, H.C. ; Wang, J.S. ; Su, Y.K. ; Chang, S.J. ; Lai, F.I. ; Chang, Y.H. ; Kuo, H.C. ; Sung, C.P. ; Yang, H.P.D. ; Lin, K.F. ; Wang, J.M. ; Chi, J.Y. ; Hsiao, R.S. ; Mikhrin, S.
Author_Institution :
Inst. of Micro-Electron., Nat. Cheng Kung Univ., Tainan City, Taiwan
Abstract :
We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p/sup +/-GaAs contact layer and on the bottom surface of the n/sup +/-GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; ohmic contacts; quantum dot lasers; semiconductor growth; surface emitting lasers; 0.33 mW; 1.3 mum; AlGaAs distributed Bragg reflectors; InAs-InGaAs; InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser; MBE; VCSEL; coplanar ohmic contact; fully doped DBR; intracavity contact; metal contacts; molecular beam epitaxy; peak lasing wavelength; sidemode suppression ratio; slope efficiencies; Apertures; Distributed Bragg reflectors; Molecular beam epitaxial growth; Ohmic contacts; Quantum dots; Substrates; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers; Fully doped distributed Bragg reflector (DBR); InAs quantum dot (QD); molecular beam epitaxy (MBE); vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.863166
