Optically controlled spatial modulation of (sub-)millimeter waves using nipi-doped semiconductors

Author

Delgado, Guillermo ; Johansson, Joakim ; Larsson, Anders ; Andersson, Thorvald

Author_Institution

Dept. of Radio & Space Sci., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

5

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

198

Lastpage

200

Abstract

The use of a molecular beam epitaxy engineered InGaAs/GaAs semiconductor structure to quasioptically modulate a millimeter wave Gaussian beam using an optical control signal has been demonstrated. The RF transmission is modulated spatially by the optically generated excess carrier density. Low optical intensities are sufficient due to the long recombination lifetime achieved in the nipi-doped structure used. A modulation depth of more than 15 dB in transmission mode has been obtained at 100 GHz. Modulation has been measured up to 5 THz using a Fourier transform spectrometer

Keywords

III-VI semiconductors; carrier density; electron-hole recombination; gallium arsenide; indium compounds; millimetre wave receivers; molecular beam epitaxial growth; semiconductor quantum wells; spatial light modulators; submillimetre wave receivers; 100 GHz; Fourier transform spectrometer; InGaAs-GaAs; MQW structure; RF transmission; modulation depth; molecular beam epitaxy; nipi-doped semiconductors; optical intensities; optically controlled spatial modulation; optically generated excess carrier density; recombination lifetime; submillimeter wave Gaussian beam; transmission mode; Charge carrier density; Gallium arsenide; Indium gallium arsenide; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Optical beams; Optical control; Optical modulation; Radio frequency;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.386130

Filename

386130