A new gate driver integrated circuit for IGBT devices with advanced protections

Author

Dulau, Laurent ; Pontarollo, Serge ; Boimond, Anthony ; Garnier, Jean-François ; Giraudo, Nicole ; Terrasse, Olivier

Author_Institution

SGS-Thomson Microelectron., Grenoble, France

Volume

21

Issue

1

fYear

2006

Firstpage

38

Lastpage

44

Abstract

The aim of this paper is to discuss new solutions in the design of insulated gate bipolar transistor (IGBT) gate drivers with advanced protections such as two-level turn-on to reduce peak current when turning on the device, two-level turn-off to limit over-voltage when the device is turned off, and an active Miller clamp function that acts against cross conduction phenomena. Afterwards, we describe a new circuit which includes a two-level turn-off driver and an active Miller clamp function. Tests and results for these advanced functions are discussed, with particular emphasis on the influence of an intermediate level in a two-level turn-off driver on overshoot across the IGBT.

Keywords

driver circuits; insulated gate bipolar transistors; integrated circuit design; overvoltage protection; IGBT devices; active Miller clamp function; cross conduction phenomena; gate driver integrated circuit; insulated gate bipolar transistors; overvoltage limit; peak current reduction; two-level turn-on driver; Bipolar transistors; Capacitance; Circuit testing; Clamps; Driver circuits; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Protection; Voltage; Active Miller clamp; bipolar CMOS DMOS (BCD); cross conduction; insulated gate bipolar transistor (IGBT); overshoot; peak current; two-level driver;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2005.861115

Filename

1566687