Title :
Design optimization of an active resonant snubber for high power IGBT converters
Author :
Combrink, Frederik W. ; Mouton, Hd.T. ; Enslin, Johan H R ; Akagi, Hirofumi
Author_Institution :
Ind. Services & Solution Dept., Siemens Ltd., Johannesburg, South Africa
Abstract :
The design optimization procedure for a new active resonant snubber topology, specifically suited for high power insulated gate bipolar transistor (IGBT) converters, is introduced. After the basic operation principles and certain implementation consideration are discussed, the optimization strategy, based on an analytical loss evaluation, is described. Experimental results obtained on an IGBT phase-arm fitted with an optimally designed snubber are presented.
Keywords :
insulated gate bipolar transistors; power convertors; snubbers; active resonant snubber topology; analytical loss evaluation; design optimization; high power IGBT converters; insulated gate bipolar transistors; Circuit topology; Design optimization; Electromagnetic interference; Insulated gate bipolar transistors; Resonance; Snubbers; Switches; Switching converters; Switching frequency; Switching loss; Active resonant snubber topology; insulated gate bipolar transistor (IGBT);
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2005.861199
