DocumentCode
781392
Title
Design optimization of an active resonant snubber for high power IGBT converters
Author
Combrink, Frederik W. ; Mouton, Hd.T. ; Enslin, Johan H R ; Akagi, Hirofumi
Author_Institution
Ind. Services & Solution Dept., Siemens Ltd., Johannesburg, South Africa
Volume
21
Issue
1
fYear
2006
Firstpage
114
Lastpage
123
Abstract
The design optimization procedure for a new active resonant snubber topology, specifically suited for high power insulated gate bipolar transistor (IGBT) converters, is introduced. After the basic operation principles and certain implementation consideration are discussed, the optimization strategy, based on an analytical loss evaluation, is described. Experimental results obtained on an IGBT phase-arm fitted with an optimally designed snubber are presented.
Keywords
insulated gate bipolar transistors; power convertors; snubbers; active resonant snubber topology; analytical loss evaluation; design optimization; high power IGBT converters; insulated gate bipolar transistors; Circuit topology; Design optimization; Electromagnetic interference; Insulated gate bipolar transistors; Resonance; Snubbers; Switches; Switching converters; Switching frequency; Switching loss; Active resonant snubber topology; insulated gate bipolar transistor (IGBT);
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/TPEL.2005.861199
Filename
1566696
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